HXY MOSFET · FETs & Power MOSFETs · MPN PHD18NQ10T-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 26.2nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 34.7W |
| RDS(on) | 80mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.535nF |
| Type | N-Channel |
100V 20A 2.5V 34.7W 80mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS