HXY MOSFET · FETs & Power MOSFETs · MPN NVTFS5C658NLWFTAG-HXY
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| Output Capacitance(Coss) | 735pF |
|---|---|
| Pd - Power Dissipation | 73.5W |
| Drain to Source Voltage | 60V |
| Configuration | Standalone |
| Gate Charge(Qg) | 35nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| RDS(on) | 4mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.18nF |
73.5W 60V 100A 1.7V 4mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS