HXY MOSFET NVTFS4C25N-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN NVTFS4C25N-HXY

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Specifications

ConfigurationStandalone
Gate Charge(Qg)9.8nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)131pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation37.5W
Reverse Transfer Capacitance (Crss@Vds)109pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)940pF

Technical details

N-Channel 30V 60A 59W Surface Mount DFN3x3-8L

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