HXY MOSFET · FETs & Power MOSFETs · MPN NVMFS5C450NAFT1G-HXY
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| Output Capacitance(Coss) | 410pF |
|---|---|
| Pd - Power Dissipation | - |
| Configuration | Standalone |
| Gate Charge(Qg) | 64nC@4.5V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 338pF |
| RDS(on) | 2.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.584nF |
40V 130A 1.6V 2.8mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS