HXY MOSFET · FETs & Power MOSFETs · MPN NVMFS5C426NWFAFT3G-HXY
No reviews yet — be the first to review HXY MOSFET NVMFS5C426NWFAFT3G-HXY.
| Output Capacitance(Coss) | 3.257nF |
|---|---|
| Pd - Power Dissipation | 114W |
| Gate Charge(Qg) | 55nC@4.5V |
| Configuration | Standalone |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 219A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Reverse Transfer Capacitance (Crss@Vds) | 196pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.461nF |
114W 40V 219A 2.3V 1.2mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS