HXY MOSFET · FETs & Power MOSFETs · MPN NVMFS5A140PLZWFT3G-HXY
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| Output Capacitance(Coss) | 770pF |
|---|---|
| Pd - Power Dissipation | 200W |
| Gate Charge(Qg) | 195nC@10V |
| Configuration | Standalone |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| RDS(on) | 3.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 697pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 10.733nF |
200W 40V 100A 2.5V 3.1mΩ@10V 1 P-Channel P-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS