HXY MOSFET · FETs & Power MOSFETs · MPN NVMFD5C674NLWFT1G-HXY
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| Output Capacitance(Coss) | 230pF |
|---|---|
| Pd - Power Dissipation | 60W |
| Drain to Source Voltage | 60V |
| Configuration | Standalone |
| Gate Charge(Qg) | 22nC@10V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| RDS(on) | 11mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 930pF |
60W 60V 35A 1.6V 11mΩ@10V 2 N-Channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS