HXY MOSFET · FETs & Power MOSFETs · MPN NVHL082N65S3HF-HXY
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| Output Capacitance(Coss) | 134pF |
|---|---|
| Pd - Power Dissipation | 470W |
| Configuration | Standalone |
| Drain to Source Voltage | 650V |
| Gate Charge(Qg) | 84nC@10V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| RDS(on) | 75mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 0.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.445nF |
470W 650V 40A 4.5V 75mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS