HXY MOSFET · FETs & Power MOSFETs · MPN NVH4L060N065SC1-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 63nC |
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 49A |
| Output Capacitance(Coss) | 101pF |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 176W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 60mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.621nF |
650V 49A 3.6V 176W 60mΩ 1 N-channel N-Channel TO-247H-4L Single FETs, MOSFETs RoHS