HXY MOSFET · FETs & Power MOSFETs · MPN NVH4L040N65S3F-HXY
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| Gate Charge(Qg) | 69.9nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 130pF |
| Current - Continuous Drain(Id) | 49A |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 241W |
| RDS(on) | 59mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.509nF |
| Type | N-Channel |
650V 49A 241W Through Hole TO-247-4L