HXY MOSFET · FETs & Power MOSFETs · MPN NVH4L022N120M3S-HXY
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| Drain to Source Voltage | 1.2kV |
|---|---|
| Gate Charge(Qg) | 162nC |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 469W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 28.8mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.818nF |
| Type | N-Channel |
1.2kV 100A 3.6V 469W 28.8mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS