HXY MOSFET · FETs & Power MOSFETs · MPN NVD6824NLT4G-VF01-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 22.7nC@10V |
| Current - Continuous Drain(Id) | 40A |
| Output Capacitance(Coss) | 310pF |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 27W |
| Reverse Transfer Capacitance (Crss@Vds) | 23.5pF |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 822pF |
| Type | N-Channel |
100V 40A 1.8V 27W 15mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS