HXY MOSFET · FETs & Power MOSFETs · MPN NVATS5A302PLZT4G-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 56nC@4.5V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 620pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 11mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.06nF |
60V 80A 110W Surface Mount TO-252-2L