HXY MOSFET · FETs & Power MOSFETs · MPN NVATS5A107PLZT4G-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 35nC@10V |
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 190pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 40.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 172pF |
| RDS(on) | 13.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.525nF |
40V 40A 1.5V 40.3W 13.5mΩ@10V 1 P-Channel P-Channel TO-252-2L Single FETs, MOSFETs RoHS