HXY MOSFET · FETs & Power MOSFETs · MPN NTMT095N65S3H-HXY
5.0/5 from 1 engineer review.
| Configuration | - |
|---|---|
| Drain to Source Voltage | 650V |
| Gate Charge(Qg) | 32nC |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 37A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 142W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.9pF |
| RDS(on) | 105mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 721pF |
650V 37A 2.3V 142W 105mΩ 1 N-channel N-Channel DFN-5B(8x8) Single FETs, MOSFETs RoHS