HXY MOSFET · FETs & Power MOSFETs · MPN NTD6416ANLT4G-HXY
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| Output Capacitance(Coss) | 60pF |
|---|---|
| Pd - Power Dissipation | 34.7W |
| Configuration | Standalone |
| Gate Charge(Qg) | 26.2nC@10V |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.535nF |
N-Channel 100V 20A 34.7W Surface Mount TO-252-2L