HXY MOSFET · FETs & Power MOSFETs · MPN NTBG040N120SC1-HXY
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| Gate Charge(Qg) | 112nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 125pF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 326W |
| RDS(on) | 52mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.766nF |
| Type | N-Channel |
1.2kV 65A 4V 326W 52mΩ 1 N-channel N-Channel TO-263-7L Single FETs, MOSFETs RoHS