HXY MOSFET · FETs & Power MOSFETs · MPN MSJUFR05N65-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 17.6nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 11.5pF |
| Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 30W |
| RDS(on) | - |
| Reverse Transfer Capacitance (Crss@Vds) | 1.9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 37.5pF |
650V 4.2A 2.7V 30W 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS