HXY MOSFET · Transistors (BJTs) · MPN MMDT4146-7-F-HXY
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| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 300MHz |
| Collector - Emitter Voltage VCEO | 40V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 300 |
| Pd - Power Dissipation | 200mW |
| Number | 1 NPN + 1 PNP |
| type | NPN+PNP |
| Current - Collector(Ic) | 200mA |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN+PNP 40V 200mA 300MHz 200mW Surface Mount SOT-363