HXY MOSFET · Transistors (BJTs) · MPN MJD42C
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 50MHz |
| Collector - Emitter Voltage VCEO | 100V |
| DC Current Gain | 200 |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 1W |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 3A |
| Vce Saturation(VCE(sat)) | 500mV |
| Operating Temperature | -55℃~+150℃ |
100V 200 1 PNP PNP 3A TO-252-2L Single Bipolar Transistors RoHS