HXY MOSFET · Transistors (BJTs) · MPN MJD127T4G-HXY
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| Vbe Saturation(VBE(sat)) | 4.5V |
|---|---|
| Current - Collector Cutoff | 10uA |
| Vbe On(VBE(on)) | - |
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 1000;12000;100 |
| Pd - Power Dissipation | 1.5W |
| type | - |
| Current - Collector(Ic) | 8A |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | 2V;4V |
Bipolar (BJT) Transistor PNP 100V 8A 1.5W Surface Mount TO-252-2L