HXY MOSFET MDV3604URH-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN MDV3604URH-HXY

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Specifications

ConfigurationStandalone
Gate Charge(Qg)12.5nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)194pF
Current - Continuous Drain(Id)32A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.95V
Pd - Power Dissipation3.57W
Reverse Transfer Capacitance (Crss@Vds)158pF
RDS(on)10mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.345nF

Technical details

P-Channel 30V 32A 3.57W Surface Mount DFN3x3-8L

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