HXY MOSFET · FETs & Power MOSFETs · MPN IXTY90N055T2-HXY
No reviews yet — be the first to review HXY MOSFET IXTY90N055T2-HXY.
| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 33nC@4.5V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.68nF |
60V 80A 1.4V 100W 6mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS