HXY MOSFET · FETs & Power MOSFETs · MPN IXTJ4N150-HXY
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| Drain to Source Voltage | 1.5kV |
|---|---|
| Gate Charge(Qg) | 14nC |
| Output Capacitance(Coss) | 16pF |
| Current - Continuous Drain(Id) | 3.7A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 35W |
| RDS(on) | 1.5Ω |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 184pF |
| Type | N-Channel |
1.5kV 3.7A 4V 35W 1.5Ω 1 N-channel N-Channel TO-3PF Single FETs, MOSFETs RoHS