HXY MOSFET IRLML6402

HXY MOSFET · FETs & Power MOSFETs · MPN IRLML6402

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Specifications

ConfigurationStandalone
Gate Charge(Qg)7.8nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)4.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)48mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)740pF

Technical details

P-Channel 20V 3.6A 1.7W Surface Mount SOT-23

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