HXY MOSFET · FETs & Power MOSFETs · MPN IRFU4105ZPBF-HXY
No reviews yet — be the first to review HXY MOSFET IRFU4105ZPBF-HXY.
| Output Capacitance(Coss) | 185pF |
|---|---|
| Pd - Power Dissipation | 87.7W |
| Configuration | Standalone |
| Gate Charge(Qg) | 36nC@10V |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.498nF |
N-Channel 60V 50A 87.7W Surface Mount TO-252-2L