HXY MOSFET IRFR3410PBF-HXY

HXY MOSFET · FETs & Power MOSFETs · MPN IRFR3410PBF-HXY

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Specifications

Output Capacitance(Coss)90pF
Pd - Power Dissipation42W
ConfigurationStandalone
Gate Charge(Qg)20nC@4.5V
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)74pF
RDS(on)37mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.964nF

Technical details

N-Channel 100V 30A 42W Surface Mount TO-252-2L

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