HXY MOSFET IRFR024NT

HXY MOSFET · FETs & Power MOSFETs · MPN IRFR024NT

No reviews yet — be the first to review HXY MOSFET IRFR024NT.

Specifications

ConfigurationStandalone
Gate Charge(Qg)12.6nC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)86pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34.7W
Reverse Transfer Capacitance (Crss@Vds)64pF
RDS(on)22mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.378nF

Technical details

N-Channel 60V 30A 34.7W Surface Mount TO-252-2L

Related FETs & Power MOSFETs