HXY MOSFET · FETs & Power MOSFETs · MPN IRFB4410ZPBF-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 31.3nC@50V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 451pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 12.9pF |
| RDS(on) | 8.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.368nF |
N-Channel 100V 70A 100W Through Hole TO-220