HXY MOSFET · FETs & Power MOSFETs · MPN IRF740-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 8.1nC@10V |
| Drain to Source Voltage | 420V |
| Output Capacitance(Coss) | 90.3pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 87W |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.368nF |
N-Channel 420V 11A 87W Through Hole TO-220