HXY MOSFET · FETs & Power MOSFETs · MPN IRF640NPBF-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 180pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 120mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.1nF |
N-Channel 200V 18A 125W Through Hole TO-220