HXY MOSFET · FETs & Power MOSFETs · MPN IRF630-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 13nC@10V |
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 90pF |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 220mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
200V 9A 75W Through Hole TO-220