HXY MOSFET · FETs & Power MOSFETs · MPN IRF540N-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 20nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 130W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 30mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.28nF |
N-Channel 100V 33A 130W Through Hole TO-220