HXY MOSFET · FETs & Power MOSFETs · MPN IRF1407PBF-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 60.8nC@10V |
| Drain to Source Voltage | 120V |
| Output Capacitance(Coss) | 423pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 119W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.614nF |
N-Channel 120V 120A 119W Through Hole TO-220