HXY MOSFET · FETs & Power MOSFETs · MPN IPW65R110CFD7XKSA1-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 36nC |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 82pF |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 142W |
| RDS(on) | 150mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 758pF |
650V 32A 2.7V 142W 150mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS