HXY MOSFET · FETs & Power MOSFETs · MPN IPW60R070CFD7XKSA1-HXY
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 46nC |
| Current - Continuous Drain(Id) | 29A |
| Output Capacitance(Coss) | 80pF |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 79mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.02nF |
| Type | N-Channel |
650V 29A 3.6V 150W 79mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS