HXY MOSFET · FETs & Power MOSFETs · MPN IPT022N10NF2SATMA1-HXY
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| Output Capacitance(Coss) | 1.505nF |
|---|---|
| Pd - Power Dissipation | 379W |
| Gate Charge(Qg) | 150nC@10V |
| Configuration | Standalone |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 300A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| RDS(on) | 2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.03nF |
379W 100V 300A 3V 2mΩ@10V 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS