HXY MOSFET · FETs & Power MOSFETs · MPN IPP65R190C6XKSA1-HXY
No reviews yet — be the first to review HXY MOSFET IPP65R190C6XKSA1-HXY.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 10.6nC |
| Drain to Source Voltage | 850V |
| Current - Continuous Drain(Id) | 20A |
| Output Capacitance(Coss) | 18pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.2V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF |
| RDS(on) | 180mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 208pF |
850V 20A 4.2V 52W 180mΩ 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS