HXY MOSFET · FETs & Power MOSFETs · MPN IPL65R650C6SATMA1-HXY
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 650V |
| Gate Charge(Qg) | 9.7nC |
| Current - Continuous Drain(Id) | 9A |
| Output Capacitance(Coss) | 19pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 43.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 147pF |
650V 9A 2.8V 43.4W 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS