HXY MOSFET · FETs & Power MOSFETs · MPN IPL60R115CFD7-HXY
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 3.3nC |
| Current - Continuous Drain(Id) | 17A |
| Output Capacitance(Coss) | 40pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Technology | E-mode |
| Pd - Power Dissipation | 113W |
| RDS(on) | 100mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF |
| Input Capacitance(Ciss) | 125pF |
650V 17A 1.7V 113W 100mΩ DFN-8(8x8) Single FETs, MOSFETs RoHS