HXY MOSFET · FETs & Power MOSFETs · MPN IPD90P03P404ATMA1-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 30nC@10V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 769pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 109W |
| RDS(on) | 3.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 726pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.8nF |
30V 100A 1.6V 109W 3.5mΩ@10V 1 P-Channel P-Channel TO-252-2L Single FETs, MOSFETs RoHS