HXY MOSFET · FETs & Power MOSFETs · MPN IPD90N06S405ATMA2-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 98nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 472pF |
| Current - Continuous Drain(Id) | 120A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 283pF |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.066nF |
| Type | N-Channel |
60V 120A 3V 125W 4.5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS