HXY MOSFET · FETs & Power MOSFETs · MPN IPD80R280P7ATMA1-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 14.1nC |
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 21.84pF |
| Current - Continuous Drain(Id) | 14.3A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 71W |
| RDS(on) | 269mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 2.31pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 287.9pF |
800V 14.3A 4V 71W 269mΩ 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS