HXY MOSFET · FETs & Power MOSFETs · MPN IPD70N10S3-12-HXY
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| Output Capacitance(Coss) | 451pF |
|---|---|
| Pd - Power Dissipation | 100W |
| Gate Charge(Qg) | 31.3nC@10V |
| Configuration | Standalone |
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| RDS(on) | 8.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 12.9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.368nF |
100W 100V 70A 1.8V 8.5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS