HXY MOSFET · FETs & Power MOSFETs · MPN IPD65R950CFDATMA1-HXY
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 5nC |
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 14pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 32W |
| RDS(on) | 1.28Ω |
| Reverse Transfer Capacitance (Crss@Vds) | 1.9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 66pF |
900V 11A 3V 32W 1.28Ω 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS