HXY MOSFET · FETs & Power MOSFETs · MPN IPD50N10S3L16ATMA2-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 22.7nC@10V |
| Current - Continuous Drain(Id) | 60A |
| Output Capacitance(Coss) | 144pF |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 67.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 11.3pF |
| RDS(on) | 13.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.208nF |
| Type | N-Channel |
100V 60A 1.7V 67.5W 13.5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS