HXY MOSFET · FETs & Power MOSFETs · MPN IPD40DP06NMATMA1-HXY
No reviews yet — be the first to review HXY MOSFET IPD40DP06NMATMA1-HXY.
| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 5.85nC@4.5V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 51pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF |
| RDS(on) | 80mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 715pF |
P-Channel 60V 10A 31.3W Surface Mount TO-252-2L