HXY MOSFET · FETs & Power MOSFETs · MPN IPD30N06S4L23ATMA2-HXY
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| Configuration | Standalone |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 36nC@10V |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 185pF |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 87.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.498nF |
| Type | N-Channel |
60V 50A 1.5V 87.7W 13mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS