HXY MOSFET · FETs & Power MOSFETs · MPN IPD30N06S2L-23-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 36nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 185pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 87.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 13mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.498nF |
N-Channel 60V 50A 87.7W Surface Mount TO-252-2L