HXY MOSFET · FETs & Power MOSFETs · MPN IPD160N04LG-HXY
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| Configuration | Standalone |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 67pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 4W |
| Reverse Transfer Capacitance (Crss@Vds) | 58pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 633pF |
N-Channel 40V 30A 4W Surface Mount TO-252-2L